Radioelektronikos terminų žodynas. – Vilnius : BĮ UAB „Litimo“. Kazimieras Gaivenis, Gytis Juška, Vidas Kalesinskas. 2000.
Back-Gate-MOS-Struktur — MOP darinys su apatine užtūra statusas T sritis radioelektronika atitikmenys: angl. back gate MOS structure vok. Back Gate MOS Struktur, f; MOS Struktur mit rückwärtigem Substratanschluß, f rus. МОП структура с нижним затвором, f pranc. structure … Radioelektronikos terminų žodynas
structure MOS à grille inférieure — MOP darinys su apatine užtūra statusas T sritis radioelektronika atitikmenys: angl. back gate MOS structure vok. Back Gate MOS Struktur, f; MOS Struktur mit rückwärtigem Substratanschluß, f rus. МОП структура с нижним затвором, f pranc. structure … Radioelektronikos terminų žodynas
MOS-Struktur mit rückwärtigem Substratanschluß — MOP darinys su apatine užtūra statusas T sritis radioelektronika atitikmenys: angl. back gate MOS structure vok. Back Gate MOS Struktur, f; MOS Struktur mit rückwärtigem Substratanschluß, f rus. МОП структура с нижним затвором, f pranc. structure … Radioelektronikos terminų žodynas
Floating Gate MOSFET — The Floating Gate MOSFET (FGMOS) is a field effect transistor, whose structure is similar to a conventional MOSFET. The gate of the FGMOS is electrically isolated, creating a floating node in DC, and a number of secondary gates or inputs are… … Wikipedia
Floating-gate transistor — The floating gate transistor is a kind of transistor that is commonly used for non volatile storage such as flash, EPROM and EEPROM memory. Floating gate transistors are almost always floating gate MOSFETs.Floating gate MOSFETs are useful because … Wikipedia
MOP darinys su apatine užtūra — statusas T sritis radioelektronika atitikmenys: angl. back gate MOS structure vok. Back Gate MOS Struktur, f; MOS Struktur mit rückwärtigem Substratanschluß, f rus. МОП структура с нижним затвором, f pranc. structure MOS à grille inférieure, f … Radioelektronikos terminų žodynas
МОП-структура с нижним затвором — MOP darinys su apatine užtūra statusas T sritis radioelektronika atitikmenys: angl. back gate MOS structure vok. Back Gate MOS Struktur, f; MOS Struktur mit rückwärtigem Substratanschluß, f rus. МОП структура с нижним затвором, f pranc. structure … Radioelektronikos terminų žodynas
MOSFET — Two power MOSFETs in the surface mount package D2PAK. Operating as switches, each of these components can sustain a blocking voltage of 120 volts in the OFF state, and can conduct a continuous current of 30 amperes in the ON state, dissipating up … Wikipedia
Michael Brown Okinawa assault incident — Michael Brown Okinawa attempted assault incident Date: November 2, 2002 Place: Okinawa, Japan Charge: Attempted rape, destruction of private property Result: Convicted of: attempted indecent assault, destruction of private property The Michael… … Wikipedia
Moscow — /mos koh/ or, for 1, 2, / kow/, n. 1. Russian, Moskva. a city in and the capital of the Russian Federation, in the W part: capital of the former Soviet Union. 8,967,000. 2. Also called Grand Duchy of Moscow. Muscovy (def. 1). 3. a city in W Idaho … Universalium
